IRF3709Z

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 95835 IRF3709Z IRF3709ZS IRF3709ZL HEXFET® Power MOSFET VDSS RDS(on) max Qg 30V 6.3m: 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3709Z D2Pak IRF3709ZS TO-262 IRF3709ZL Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter iRθJC Junction-to-Case gRθJA Junction-to-Ambient (PCB Mount) Max. 30 ± 20 87h 62h 350 79 40 0.53 -55 to + 175 300 (1.6mm from case) y y10 lbf in (1.1N m) Typ. ––– ––– Max. 1.89 40 Units V A W W/°C °C Units °C/W Notes  through ‡ are on page 12 www.irf.com 1 1/16/04 IRF3709Z/S/L Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakag...