HFS2N60S

HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 2.0* 1.35* 8.0* ±30 120 2.0 5.4 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 23 0.18 -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ. -- -- Max. 5.5 62.5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions M...