STP60NE06-16 STP60NE06-16FP
N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE™" POWER MOSFET
Table 1. ...
STP60NE06-16 STP60NE06-16FP
N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE™" POWER MOSFET
Table 1. General Features
Type
VDSS
STP60NE06-16
60 V
STP60NE06-16FP 60 V
RDS(on) < 0.016 Ω < 0.016 Ω
ID 60 A 35 A
Figure 1. Package
FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.013 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ LOW GATE CHARGE 100°C ■ HIGH dv/dt CAPABILITY ■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION
3 2 1
TO-220
3 2 1
TO-220 FP
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number STP60NE06-16 STP60NE06-16FP
Marking P60NE06 P60NE06FP
April 2004
Package TO-220 TO-220FP
Packaging TUBE TUBE
REV. 2
1/11
STP60NE06-16/FP
Table 3. Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (cont.) at TC = 25 °C
ID Drain Current (cont.) at TC = 100 °C
IDM (1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25 °C
Derating Factor
VISO
Insulation Withstand Voltage (DC)
dv/dt (2) Peak Diode Recove...
