J304 Datasheet | 2SJ304





(Datasheet) J304 Datasheet PDF Download

Part Number J304
Description 2SJ304
Manufacture Toshiba
Total Page 6 Pages
PDF Download Download J304 Datasheet PDF

Features: 2SJ304 TOSHIBA Field Effect Transistor S ilicon P Channel MOS Type (L2−π−MO SIV) 2SJ304 DC−DC Converter, Relay D rive and Motor Drive Applications Unit : mm z 4-V gate drive z Low drain−so urce ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admitta nce : |Yfs| = 8.0 S (typ.) z Low leakag e current : IDSS = −100 μA (max) (VD S = −60 V) z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (T a = 25°C) Characteristics Symbol Ra ting Unit Drain−source voltage Dra in−gate voltage (RGS = 20 kΩ) Gate −source voltage Drain current DC (N ote 1) Pulse(Note 1) Drain power dissi pation (Tc = 25°C) Channel temperatur e Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg −60 −60 20 −14 −56 40 150 −55 to 150 V V V A W °C °C JEDEC ― JEITA SC- 67 TOSHIBA 2-10R1B Weight: 1.9 g (ty p.) Note: Using continuously under hea vy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, et.

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2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON resistance : RDS (ON) = 80 m(typ.)
z High forward transfer admittance : |Yfs| = 8.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
60
60
±20
14
56
40
150
55 to 150
V
V
V
A
W
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
3.125
62.5
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29

                 






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