2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and ...
2SJ304
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS ID IDP PD Tch Tstg
−60
−60
±20 −14 −56 40 150 −55 to 150
V V V
A
W °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol...