TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3075
2SC3075
Switching Regulator and High Voltage...
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (PCT process)
2SC3075
2SC3075
Switching
Regulator and High Voltage Switching Applications
DC-DC Converter Applications
DC-AC Converter Applications
Unit: mm
Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A)
High collector breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
500
V
400
V
7
V
0.8 A
1.5
0.5
A
1.0 W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2010-02-05
2SC3075
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-o...
