SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1157
DESCRIPTION ·With TO-202 package ·H...
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SC1157
DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647
APPLICATIONS ·For power amplifier switching
applications
PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25? )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO VEBO
Collector-emitter voltage Emitter-base voltage
IC Collector current
PC Collector power dissipation Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25?
VALUE 110 100 5 0.8 7
-40~150 -40~150
UNIT V V V A W ? ?
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SC1157
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A
VBEsat Base-emitter saturation voltage
IC=300mA IB=30m A
V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain fT Transition frequency
IE=100µA; IC=0 VCB=110V; IE=0 VEB=5V; IC=0 IC=300mA ; VCE=4V IE=100mA ; VCB=10V
MIN TYP. MAX UNIT 1.2 V 1.5 V
110 V 100 V
5V 1.0 µA 1.0 µA
20 300 70 MHz
2
SavantIC Semiconductor
Silicon
NPN Power
Transistors
PACKAGE OUTLINE
Product Specificat...