IXTA200N055T2-7

TrenchT2TM Power MOSFET Preliminary Technical Information IXTA200N055T2-7 VDSS = ID25 = RDS(on) ≤ 55V 200A 4.2mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 55 55 V V ± 20 V 200 A 160 A 500 A 100 A 600 mJ 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 3g Characteristic Values Min. Typ. Max. 55 V 2.0 4.0 V ±200 nA 5 μA 50 μA 3.3 4.2 mΩ TO-263 (7-lead) 1 7 Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain (TAB) Features z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 12V Battery - ABS Systems z DC/DC Converters and Off-line UPS z Primary- Side Switch z High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS100081(11/08) Symbol Test Conditions (TJ = 25°C, unless o...