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IXTA200N085T Dataheets PDF



Part Number IXTA200N085T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA200N085T DatasheetIXTA200N085T Datasheet (PDF)

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC .

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 85 V 85 V ± 20 200 75 540 25 1.0 V A A A A J 3 V/ns 480 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3g 2.5 g Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 200 nA 5 µA 250 µA 4.2 5.0 m Ω TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99643 (11/06) IXTA200N085T IXTP200N085T Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A RthJC RthCH TO-220 Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) IS VGS = 0 V ISM Pulse width limited by TJM VSD IF = 25 A, VGS = 0 V, Note 1 trr IF = 25 A, -di/dt = 100 A/µs VR = 40 V, VGS = 0 V Characteristic Values Min. Typ. Max. 72 125 S TO-263AA (IXTA) Outline 7600 1040 200 pF pF pF 32 ns 80 ns 65 ns Pins: 1 - Gate 2 - Drain 64 ns 3 - Source 4, TAB - Drain 152 37 42 0.50 nC nC nC 0.31 °C/W °C/W Characteristic Values Min. Typ. Max. 200 A 540 A 1.0 V Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 4.83 2.79 0.51 1.14 0.99 1.40 0.46 1.14 0.74 1.40 8.64 7.11 9.65 8.13 9.65 6.86 2.54 10.29 8.13 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 0.46 0.74 Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .270 .100 .405 .320 BSC .575 .090 .040 .050 0 .625 .110 .055 .070 .015 .018 .029 TO-220AB (IXTP) Outline ns 90 Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location is 5 mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405B2 6,759,692 7,063,975 B2 6,710,463 6771478 B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ 25ºC 200 VGS = 10V 180 8V 7V 160 140 120 100 6V 80 60 40 5V 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VDS - Volts Fig. 3. Output Characteristics @ 150ºC 200 VGS = 10V 180 8V 7V 160 140 120 6V 100 80 60 5V 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current 2.8 2.6 2.4 TJ = 175ºC 2.2 2 1.8 VGS = 10V 15V - - - - 1.6 1.4 1.2 1 0.8 TJ = 25ºC 0.6 0 40 80 120 160 200 240 280 320 ID - Amperes RDS(on) - Normalized © 2006 IXYS CORPORATION All rights reserved ID - Amperes RDS(on) - Normalized ID - Amperes IXTA200N085T IXTP200N085T Fig. 2. Extended Output Characteristics @ 25ºC 300 VGS = 10V 270 8V 7V 240 210 180 150 6V 120 90 60 30 5V 0 0 1 2 34 5 VDS - Volts 6 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature 2.6 2.4 VGS = 10V 2.2 2.0 .


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