Document
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA 200N085T IXTP 200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
85 V 85 V
± 20
200 75
540
25 1.0
V
A A A
A J
3 V/ns
480 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
3g 2.5 g
Characteristic Values Min. Typ. Max. 85 V
2.0 4.0 V
± 200 nA
5 µA 250 µA 4.2 5.0 m Ω
TO-263 (IXTA)
G S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive
- Motor Drives - 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V
Systems High Current Switching Applications
© 2006 IXYS CORPORATION All rights reserved
DS99643 (11/06)
IXTA200N085T IXTP200N085T
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1
Ciss Coss Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf
Qg(on) Qgs Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC RthCH
TO-220
Source-Drain Diode
Symbol
Test Conditions
TJ = 25° C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/µs VR = 40 V, VGS = 0 V
Characteristic Values Min. Typ. Max.
72 125
S
TO-263AA (IXTA) Outline
7600 1040
200
pF pF pF
32 ns
80 ns
65 ns
Pins: 1 - Gate 2 - Drain
64 ns
3 - Source 4, TAB - Drain
152 37 42
0.50
nC nC nC
0.31 °C/W °C/W
Characteristic Values Min. Typ. Max.
200 A
540 A
1.0 V
Dim.
A A1
b b2
c c2
D D1
E E1 e
L L1 L2 L3 L4
R
Millimeter Min. Max.
4.06 2.03
4.83 2.79
0.51 1.14
0.99 1.40
0.46 1.14
0.74 1.40
8.64 7.11
9.65 8.13
9.65 6.86 2.54
10.29 8.13 BSC
14.61 2.29 1.02 1.27 0
15.88 2.79 1.40 1.78 0.38
0.46 0.74
Inches Min. Max.
.160 .190 .080 .110
.020 .039 .045 .055
.018 .029 .045 .055
.340 .380 .280 .320
.380 .270 .100
.405 .320 BSC
.575 .090 .040 .050
0
.625 .110 .055 .070 .015
.018 .029
TO-220AB (IXTP) Outline
ns 90
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location is 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2
6,710,405B2 6,759,692 7,063,975 B2
6,710,463
6771478 B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ 25ºC
200 VGS = 10V
180 8V 7V
160
140
120 100 6V
80
60
40 5V
20
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VDS - Volts
Fig. 3. Output Characteristics @ 150ºC
200 VGS = 10V
180 8V 7V
160
140
120 6V
100
80 60 5V
40
20
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
2.8
2.6
2.4 TJ = 175ºC
2.2
2
1.8
VGS = 10V 15V - - - -
1.6
1.4
1.2
1 0.8 TJ = 25ºC
0.6 0
40 80 120 160 200 240 280 320
ID - Amperes
RDS(on) - Normalized
© 2006 IXYS CORPORATION All rights reserved
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTA200N085T IXTP200N085T
Fig. 2. Extended Output Characteristics @ 25ºC
300 VGS = 10V
270 8V 7V
240
210
180
150 6V
120
90
60 30 5V
0 0 1 2 34 5
VDS - Volts
6
Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature
2.6
2.4 VGS = 10V
2.2
2.0
.