IXTA220N04T2-7

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA220N04T2-7 VDSS = ID25 = RDS(on) ≤ 40V 220A 3.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 40 40 V V ± 20 V 220 A 160 A 660 A 110 A 600 mJ 360 W -55 ... +175 175 -55 ... +175 300 260 3 °C °C °C °C °C g Characteristic Values Min. Typ. Max. 40 V 2.0 4.0 V ±200 nA 5 μA 50 μA 2.8 3.5 mΩ 1 7 Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain (TAB) Features z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications Synchronous Buck Converters High Current Switching Power Supplies Battery Powered Electric Motors Resonant-mode power supplies Electronics Ballast Application Class D Audio Amplifiers © 2008 IXYS CORPORATION, All rights reserved DS99962A(11/08) Symbol Test Conditions (TJ = 25°C, u...