Power MOSFET
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA182N055T IXTP182N055T
N-Channel Enhancement Mode Avalan...
Description
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA182N055T IXTP182N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 182 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-263 TO-220
Maximum Ratings
55 V 55 V
± 20
182 75
490
25 1.0
V
A A A
A J
3 V/ns
360 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
2.5 g 3.0 g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 55 V
2.0 4.0 V
± 200 nA
5 µA 250 µA 3.8 5.0 m Ω
TO-263 (IXTA)
G S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - High Side Switch - 12V Battery ...
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