Power MOSFET
Preliminary Technical Information
TrenchMVTM
IXTA182N055T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
...
Description
Preliminary Technical Information
TrenchMVTM
IXTA182N055T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 182 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
55 V 55 V
± 20
182 160 490
25 1.0
3
V
A A A
A J
V/ns
1
7
Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain
(TAB)
360
-55 ... +175 175
-55 ... +175
300 260
3
W
°C °C °C
°C °C
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS)
g rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values Min. Typ. Max. 55 V
2.0 4.0 V
± 100 nA
5 µA 250 µA 3.5 5.0 m Ω
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - High Side Switch - 12V Battery
- ABS Systems DC/DC Converters and Off-line UPS Primary- Side ...
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