Power MOSFET
Preliminary Technical Information
TrenchMVTM
IXTC280N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Chann...
Description
Preliminary Technical Information
TrenchMVTM
IXTC280N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 145 3.6
V A mΩ
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient
55 55
± 20
V V
V
TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
145 A 75 A
600 A
40 A 1.5 J
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω
TC = 25°C
3 V/ns
160
-55 ... +175 175
-55 ... +175
W
°C °C °C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS
300 260
2500
°C °C
V
Mounting force
11..65/2.5..15
N/lb.
2g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 55 V
2.0 4.0 V
± 200 nA
25 μA 250 μA 2.9 3.6 mΩ
ISOPLUS220 (IXTC) E153432
G DS
G = Gate S = Source
Isolated back surface D = Drain
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor D...
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