Power MOSFET
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N075T7
N-Channel Enhancement Mode Avalanche Rated
V...
Description
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA160N075T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 160 6.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-3P, TO-220)
TO-263 types
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Maximum Ratings
75 V 75 V
± 20
160 120 430
25 750
V
A A A
A mJ
3 V/ns
360
-55 ... +175 175
-55 ... +175
W
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
3g
Characteristic Values Min. Typ. Max. 75 V
2.0 4.0 V
± 200 nA
25 µA 250 µA 4.8 6.0 m Ω
TO-263 (7-lead) (IXTA..7)
1
7 TAB
Pins: 1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Conv...
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