Power MOSFET
Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
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Description
Preliminary Technical Information
TrenchMVTM
IXTA200N075T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
75 V 75 V
± 20
200 120 540
25 500
3
V
A A A
A mJ
V/ns
1
7
Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain
(TAB)
430
-55 ... +175 175
-55 ... +175
300 260
3
Features
W Ultra-low On Resistance
°C °C °C
Unclamped Inductive Switching (UIS) rated
Low package inductance - easy to drive and to protect
°C 175 ° C Operating Temperature °C
Advantages g Easy to mount
Space savings
High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values Min. Typ. Max. 75 V
2.0 4.0 V
± 200 nA
5 µA 250 µA 4.0 5.0 m Ω
Applications Automotive - Motor Drives - 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V
S...
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