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IXTQ200N075T Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
| Part | IXTQ200N075T |
|---|---|
| Description | Power MOSFET |
| Feature | Preliminary Technical Information
Trenc h Gate Power MOSFET
IXTH200N075T IXTQ2 00N075T
N-Channel Enhancement Mode Ava lanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5. 0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Cond itions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 2 5°C Lead Current Limit, RMS TC = 25°C , pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A /μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1. 6 mm (0. 062 in. ) from case for 10 s Plastic body for 10 seco nds Mounting torque TO-3P TO-247 Maxi . |
| Manufacture | IXYS Corporation |
| Datasheet |
| Part | IXTQ200N075T |
|---|---|
| Description | Power MOSFET |
| Feature | Preliminary Technical Information
Trenc h Gate Power MOSFET
IXTH200N075T IXTQ2 00N075T
N-Channel Enhancement Mode Ava lanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5. 0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Cond itions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 2 5°C Lead Current Limit, RMS TC = 25°C , pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A /μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1. 6 mm (0. 062 in. ) from case for 10 s Plastic body for 10 seco nds Mounting torque TO-3P TO-247 Maxi . |
| Manufacture | IXYS Corporation |
| Datasheet |
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