Power MOSFET
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avala...
Description
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
75 200 5.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
75 75
± 20
200 75
540
25 750
V V
V
A A A
A mJ
3 V/ns
430 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
5.5 g 6g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 75 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 4.0 5.0 mΩ
TO-247 (IXTH)
G DS
TO-3P (IXTQ)
(TAB)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features z International standard packages z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect
Advantages z Easy to mount z Space savings z High power density
© 2006 IXYS CORPORATION All rights reserved
DS99634 (11/06)
IXTH200N075T IXTQ200N075T
Symbol
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