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IXTQ200N075T Datasheet, Equivalent, Power MOSFET.

Power MOSFET

Power MOSFET

 

 

 

Part IXTQ200N075T
Description Power MOSFET
Feature Preliminary Technical Information Trenc h Gate Power MOSFET IXTH200N075T IXTQ2 00N075T N-Channel Enhancement Mode Ava lanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Cond itions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 2 5°C Lead Current Limit, RMS TC = 25°C , pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A /μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seco nds Mounting torque TO-3P TO-247 Maxi .
Manufacture IXYS Corporation
Datasheet
Download IXTQ200N075T Datasheet
Part IXTQ200N075T
Description Power MOSFET
Feature Preliminary Technical Information Trenc h Gate Power MOSFET IXTH200N075T IXTQ2 00N075T N-Channel Enhancement Mode Ava lanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Cond itions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 2 5°C Lead Current Limit, RMS TC = 25°C , pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A /μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seco nds Mounting torque TO-3P TO-247 Maxi .
Manufacture IXYS Corporation
Datasheet
Download IXTQ200N075T Datasheet

IXTQ200N075T

IXTQ200N075T
IXTQ200N075T

IXTQ200N075T

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