Document
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH220N075T IXTQ220N075T
VDSS = ID25 =
RDS(on) ≤
75 220 4.5
V A mΩ
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
75 75
± 20
220 75
600
25 1.0
VG V DS
V
A TO-3P (IXTQ) A A
A J
(TAB)
3
480 -55 ... +175
175 -55 ... +175
V/ns
W °C °C °C
G D S
G = Gate S = Source
D = Drain TAB = Drain
(TAB)
300 °C 260 °C
1.13 / 10 Nm/lb.in.
5.5 g 6g
Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Characteristic Values Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 3.6 4.5 mΩ
Advantages Easy to mount Space savings High power density
Applications Automotive - Motor Drives - 42V Power Bus
- ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99635 (11/06)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1
Ciss Coss Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 3.3 Ω (External) tf
Qg(on) Qgs Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC RthCH
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1
trr IF = 25 A, -di/dt = 100 A/μs VR = 40 V, VGS = 0 V
IXTH220N075T IXTQ220N075T
Characteristic Values Min. Typ. Max.
75 120
S
7700 1100
230
pF pF pF
29 ns 65 ns 55 ns 47 ns
165 nC 40 nC 50 nC
0.25
0.31 °C/W °C/W
Characteristic Values Min. Typ. Max.
220 A
600 A
1.0 V
80 ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Min. Max.
A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26
e 5.20 5.72 L 19.81 20.32 L1 4.50
∅P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents:
4,835,592 4,850,072 4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,710,405B2 6,710,463
6,727,585 6,759,692 6771478 B2
7,005,734 B2 7,063,975 B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ 25ºC
220
200
VGS = 10V 8V
180 7V
160
140
120
100 6V
80
60
40 5V
20
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VDS - Volts
220 200 180 160 140 120 100
80 60 40 20
0 0
Fig. 3. Output Characteristics @ 150ºC
VGS = 10V 8V 7V
6V
5V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS - Volts
2
Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current
2.6
2.4
2.2
2
1.8
VGS = 10V 15V - - - - -
1.6
TJ = 175ºC
1.4
1.2
1
0.8 TJ = 25ºC
0.6 0
30 60 90 120 150 180 210 240 270 300
ID - Amperes
RDS(on) - Normalized
© 2006 IXYS CORPORATION All rights reserved
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTH220N075T IXTQ220N075T
Fig. 2. Extended Output Characteristics @ 25ºC
300 VGS = 10V
270 8V 240 7V
210
180
150 120 6V
90
60 30 5V
0 0 0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
4.5
Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature
2.4
2.2 VGS = 10V
2
1.8
1.6 I D = 220A
1.4 I D = 110A
1.2
1
0.8
0.6 -50
-25
.