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IXTQ220N075T Dataheets PDF



Part Number IXTQ220N075T
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTQ220N075T DatasheetIXTQ220N075T Datasheet (PDF)

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS.

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 75 75 ± 20 220 75 600 25 1.0 VG V DS V A TO-3P (IXTQ) A A A J (TAB) 3 480 -55 ... +175 175 -55 ... +175 V/ns W °C °C °C G D S G = Gate S = Source D = Drain TAB = Drain (TAB) 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.5 g 6g Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 3.6 4.5 mΩ Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99635 (11/06) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A RthJC RthCH Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Pulse width limited by TJM VSD IF = 25 A, VGS = 0 V, Note 1 trr IF = 25 A, -di/dt = 100 A/μs VR = 40 V, VGS = 0 V IXTH220N075T IXTQ220N075T Characteristic Values Min. Typ. Max. 75 120 S 7700 1100 230 pF pF pF 29 ns 65 ns 55 ns 47 ns 165 nC 40 nC 50 nC 0.25 0.31 °C/W °C/W Characteristic Values Min. Typ. Max. 220 A 600 A 1.0 V 80 ns TO-247 AD Outline 123 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ 25ºC 220 200 VGS = 10V 8V 180 7V 160 140 120 100 6V 80 60 40 5V 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VDS - Volts 220 200 180 160 140 120 100 80 60 40 20 0 0 Fig. 3. Output Characteristics @ 150ºC VGS = 10V 8V 7V 6V 5V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS - Volts 2 Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current 2.6 2.4 2.2 2 1.8 VGS = 10V 15V - - - - - 1.6 TJ = 175ºC 1.4 1.2 1 0.8 TJ = 25ºC 0.6 0 30 60 90 120 150 180 210 240 270 300 ID - Amperes RDS(on) - Normalized © 2006 IXYS CORPORATION All rights reserved ID - Amperes RDS(on) - Normalized ID - Amperes IXTH220N075T IXTQ220N075T Fig. 2. Extended Output Characteristics @ 25ºC 300 VGS = 10V 270 8V 240 7V 210 180 150 120 6V 90 60 30 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS - Volts 4.5 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature 2.4 2.2 VGS = 10V 2 1.8 1.6 I D = 220A 1.4 I D = 110A 1.2 1 0.8 0.6 -50 -25 .


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