IXTC250N075T

Preliminary Technical Information TrenchMVTM IXTC250N075T Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = RDS(on) ≤ 75 128 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAR EAS dv/dt P D TJ TJM Tstg TL T SOLD V ISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient Maximum Ratings 75 V 75 V ± 20 V TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C 128 A 75 A 600 A 25 A 1.0 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS T J ≤ 175°C, R G = 3.3 Ω T C = 25°C 3 V/ns 160 -55 ... +175 175 -55 ... +175 W °C °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, t = 1 minute, I < 1 mA, RMS ISOL 300 260 2500 °C °C V Mounting force 11..65/2.5..15 N/lb. 2g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA I GSS V GS = ± 20 V, V DS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C R DS(on) V = 10 V, I = 25 A, Notes 1, 2 GS D Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 4.4 m Ω ISOPLUS220 (IXTC) E153432 G DS G = Gate S = Source Isolated back surface D = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Appli...