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IXTH250N075T Dataheets PDF



Part Number IXTH250N075T
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTH250N075T DatasheetIXTH250N075T Datasheet (PDF)

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH250N075T IXTQ250N075T VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, .

  IXTH250N075T   IXTH250N075T


IXTC250N075T IXTH250N075T IXTQ250N075T


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