IXTV250N075T

Preliminary Technical Information TrenchMVTM Power MOSFET IXTV250N075T IXTV250N075TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 75 75 ± 20 250 75 560 40 1.5 V V V A A A A J 3 V/ns 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...15 3 W °C °C °C °C °C N/lb. g Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 25 µA 250 µA 3.3 4.0 m Ω PLUS220 (IXTV) G DS PLUS220SMD (IXTV_S) D (TAB) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Co...