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IXTP70N085T Dataheets PDF



Part Number IXTP70N085T
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTP70N085T DatasheetIXTP70N085T Datasheet (PDF)

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(on) = ≤ 70 13.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case .

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(on) = ≤ 70 13.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 50 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 85 85 ± 20 70 190 25 500 V V V A A A mJ 3 V/ns 176 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3g 2.5 g Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ± 100 nA 10.5 1 μA 100 μA 13.5 mΩ TO-263 (IXTA) G S TO-220 (IXTP) (TAB) GD S (TAB) G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99639 (11/06) IXTA70N085T IXTP70N085T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 10 Ω (External) tf Qg(on) Qgs Qgd VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A RthJC RthCS TO-220 Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Pulse width limited by TJM VSD IF = 25 A, VGS = 0 V, Note 1 trr IF = 25 A, -di/dt = 100 A/μs VR = 40 V, VGS = 0 V Characteristic Values Min. Typ. Max. 30 52 S TO-263 (IXTA) Outline 2570 370 85 pF pF pF 22 ns 72 ns 40 ns Pins: 1 - Gate 2 - Drain 40 ns 3 - Source 4, TAB - Drain 59 15 14.5 0.50 nC nC nC 0.85 °C/W °C/W Characteristic Values Min. Typ. Max. 70 A 190 A 1.1 V Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 4.83 2.79 0.51 1.14 0.99 1.40 0.46 1.14 0.74 1.40 8.64 7.11 9.65 8.13 9.65 6.86 2.54 10.29 8.13 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 0.46 0.74 Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .280 .320 .380 .270 .100 .405 .320 BSC .575 .090 .040 .050 0 .625 .110 .055 .070 .015 .018 .029 TO-220 (IXTP) Outline 90 ns Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d.


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