Document
TrenchMVTM Power MOSFET
IXTA180N085T7
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = ID25 =
RDS(on) ≤
85V 180A 5.5mΩ
TO-263 (7-lead)
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds
Maximum Ratings 85 85
V V
± 20 V
180 A 160 A 480 A
25 A 1.0 J
430 W
-55 ... +175 175
-55 ... +175
300 260
3
°C °C °C
°C °C
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Characteristic Values
Min.
Typ. Max.
85 V
2.0 4.0 V
±200 nA
5 μA 250 μA 4.5 5.5 mΩ
1
7
Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain
(TAB)
Features
z International Standard Package z 175°C Operating Temperature z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems
z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V
Systems z High Current Switching Applications z Distributed Power Architechtures
and VRMs z Electronic Valve Train Systems z High Voltage Synchronous Recifiers
© 2009 IXYS CORPORATION, All Rights Reserved
DS99700A(03/09)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RthJC
Characteristic Values Min. Typ. Max.
70 120
S
8800 950 110
pF pF pF
32 ns 70 ns 55 ns 65 ns
170 nC 40 nC 46 nC
0.35 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 25A, VGS = 0V, Note 1
trr IRM QRM
IF = 90A, VGS = 0V, -di/dt = 100A/μs VR = 40V
Characteristic Values
Min. Typ.
Max.
180 A
480 A
1.0 V
63 ns 4.1 A 129 nC
IXTA180N085T7
TO-263 (7-lead) (IXTA..7) Outline
Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. 2. On Through-Hole Packages, RDS(on) Kelvin Test Contact Location must be 5mm or Less from the Package Body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
ID - Amperes
180 160 140 120 100
80 60 40 20
0 0
Fig. 1. Output Characteristics @ 25ºC
VGS = 10V 9V 8V
7V
6V
5V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VDS - Volts
1
Fig. 3. Output Characteristics @ 150ºC
180 VGS = 10V
160 9V 8V
140 7V
120
100 6V
80
60 5V
40
20
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current
2.8
2.6
2.4 TJ = 175ºC 2.2
2 VGS = 10V 1.8 15V - - - -
1.6
1.4
1.2
1 0.8 TJ = 25ºC
0.6 0
40 80 120 160 200 240 280 ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTA180N085T7
Fig. 2. Extended Output Characteristics
@ 25ºC
280
VGS = 10V
240
9V 8V
200 7V
160 6V
120
80 40 5V
0 0123456
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature
2.6 2.4 VGS = 10V
2.2
2.0 1.8 I D = 180A
I D = 90A 1.6
1.4
1.2
1.0
0.8
0.6 -50
-25
0 25 50 75 100 125 150 175 TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
180 External Lead Current Limit
160
140
120
100
80
60
40
20
0 -50
-25
0 25 50 75 100 125 150 175 TC - Degrees Centigrade
RDS(on) - Normalized
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_180N085T(5V)03-04-09-D
IXTA180N085T7
ID - Amperes
Fig. 7. Input Admittance
240
TJ = - 40ºC 200 25ºC
125ºC 160
120
80
40
0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS - Volts
270 240 210 180 150 120
90 60 30
0 0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
TJ = 150ºC
TJ = 25ºC
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts
1.3
VGS - Volts
g f s - Siemens
180 160 140 120 100
80 60 40 20
0 0
Fig. 8. Transconductance
TJ = - 40ºC 25ºC 150ºC
40 80 120 160 200 240 ID - Amperes
Fig. 10. Gate Charge
10 9 VDS = 43V I D = 25A 8 I G = 10mA 7
6
5
4
3
2
1
0 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs
IS - Amperes
Capacitance - PicoFarads
100,000 10,000 1,000 100
Fig. 11. Capa.