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IXTA180N085T7 Dataheets PDF



Part Number IXTA180N085T7
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTA180N085T7 DatasheetIXTA180N085T7 Datasheet (PDF)

TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Maximum Ratings .

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TrenchMVTM Power MOSFET IXTA180N085T7 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 = RDS(on) ≤ 85V 180A 5.5mΩ TO-263 (7-lead) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Maximum Ratings 85 85 V V ± 20 V 180 A 160 A 480 A 25 A 1.0 J 430 W -55 ... +175 175 -55 ... +175 300 260 3 °C °C °C °C °C g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Characteristic Values Min. Typ. Max. 85 V 2.0 4.0 V ±200 nA 5 μA 250 μA 4.5 5.5 mΩ 1 7 Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain (TAB) Features z International Standard Package z 175°C Operating Temperature z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V Systems z High Current Switching Applications z Distributed Power Architechtures and VRMs z Electronic Valve Train Systems z High Voltage Synchronous Recifiers © 2009 IXYS CORPORATION, All Rights Reserved DS99700A(03/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RthJC Characteristic Values Min. Typ. Max. 70 120 S 8800 950 110 pF pF pF 32 ns 70 ns 55 ns 65 ns 170 nC 40 nC 46 nC 0.35 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 25A, VGS = 0V, Note 1 trr IRM QRM IF = 90A, VGS = 0V, -di/dt = 100A/μs VR = 40V Characteristic Values Min. Typ. Max. 180 A 480 A 1.0 V 63 ns 4.1 A 129 nC IXTA180N085T7 TO-263 (7-lead) (IXTA..7) Outline Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. 2. On Through-Hole Packages, RDS(on) Kelvin Test Contact Location must be 5mm or Less from the Package Body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes ID - Amperes 180 160 140 120 100 80 60 40 20 0 0 Fig. 1. Output Characteristics @ 25ºC VGS = 10V 9V 8V 7V 6V 5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VDS - Volts 1 Fig. 3. Output Characteristics @ 150ºC 180 VGS = 10V 160 9V 8V 140 7V 120 100 6V 80 60 5V 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 2.8 2.6 2.4 TJ = 175ºC 2.2 2 VGS = 10V 1.8 15V - - - - 1.6 1.4 1.2 1 0.8 TJ = 25ºC 0.6 0 40 80 120 160 200 240 280 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXTA180N085T7 Fig. 2. Extended Output Characteristics @ 25ºC 280 VGS = 10V 240 9V 8V 200 7V 160 6V 120 80 40 5V 0 0123456 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 2.6 2.4 VGS = 10V 2.2 2.0 1.8 I D = 180A I D = 90A 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature 180 External Lead Current Limit 160 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade RDS(on) - Normalized © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_180N085T(5V)03-04-09-D IXTA180N085T7 ID - Amperes Fig. 7. Input Admittance 240 TJ = - 40ºC 200 25ºC 125ºC 160 120 80 40 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS - Volts 270 240 210 180 150 120 90 60 30 0 0.4 Fig. 9. Forward Voltage Drop of Intrinsic Diode TJ = 150ºC TJ = 25ºC 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts 1.3 VGS - Volts g f s - Siemens 180 160 140 120 100 80 60 40 20 0 0 Fig. 8. Transconductance TJ = - 40ºC 25ºC 150ºC 40 80 120 160 200 240 ID - Amperes Fig. 10. Gate Charge 10 9 VDS = 43V I D = 25A 8 I G = 10mA 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs IS - Amperes Capacitance - PicoFarads 100,000 10,000 1,000 100 Fig. 11. Capa.


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