Power MOSFET
Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
...
Description
Preliminary Technical Information
TrenchMVTM
IXTA200N085T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 200 5.0
V A mΩ
Symbol
Test Conditions
Maximum Ratings TO-263 (7-lead) (IXTA..7)
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Limited, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
85 V 85 V
± 20 V 1
200 A
120 A
7
540 A Pin-out:1 - Gate
(TAB)
25 A 1.0 mJ
2, 3 - Source 4 - NC (cut) 5,6,7 - Source
3 V/ns
TAB (8) - Drain
480
-55 ... +175 175
-55 ... +175
300 260
3
W
°C Features
°C Ultra-low On Resistance
°C Unclamped Inductive Switching (UIS)
°C °C
rated Low package inductance - easy to drive and to protect
g 175 °C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values Min. Typ. Max. 85 V
2.0 4.0 V
± 200 nA
5 μA 250 μA 4.0 5.0 mΩ
Advantages Easy to mount Space savings High power density
Applications Automotive
- Motor Drives - 42V Power Bus
- ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High ...
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