Power MOSFET
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH230N085T IXTQ...
Description
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH230N085T IXTQ230N085T
VDSS = ID25 =
RDS(on) ≤
85 230 4.4
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤IDM, di/dt ≤100 A/ms, VDD ≤VDSS TJ ≤175°C, RG = 3.3Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247
Maximum Ratings
85 V 85 V
G DS
(TAB)
± 20
230 75
520
40 1.0
3
V
A A A
A J
V/ns
TO-3P (IXTQ) G D S
(TAB)
550
-55 ... +175 175
-55 ... +175
W G = Gate D = Drain °C S = Source TAB = Drain °C °C
300 °C 260 °C 1.13 / 10 Nm/lb.in.
5.5 g 6g
Features Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
85 V
2.0 4.0 V
± 200 nA
5 mA 250 mA
3.7 4.4 mW
Advantages Easy to mount Space savings High power density
Applications Automotive
- Motor Drives - 42V Power Bus
- ABS Systems DC/DC Converters and Off-li...
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