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IXTA80N10T7 Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
| Part | IXTA80N10T7 |
|---|---|
| Description | Power MOSFET |
| Feature | Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 80 14
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 15 Ω TC = 25°C
1. 6 mm (0. 062 in. ) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA. . 7) 100 V 100 V ± 30 80 220 25 400 3 V . |
| Manufacture | IXYS Corporation |
| Datasheet |
| Part | IXTA80N10T7 |
|---|---|
| Description | Power MOSFET |
| Feature | Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 80 14
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 15 Ω TC = 25°C
1. 6 mm (0. 062 in. ) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA. . 7) 100 V 100 V ± 30 80 220 25 400 3 V . |
| Manufacture | IXYS Corporation |
| Datasheet |
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