Power MOSFET
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode Avalanche Rated
VDS...
Description
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 80 14
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 15 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Maximum Ratings TO-263 (7-lead) (IXTA..7)
100 V 100 V
± 30
80 220
25 400
3
V
A A A mJ
V/ns
1
7
Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain
(TAB)
230
-55 ... +175 175
-55 ... +175
300 260
3
W
°C Features °C Ultra-low On Resistance °C Unclamped Inductive Switching (UIS)
rated °C Low package inductance °C - easy to drive and to protect
g 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 100 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values Min. Typ. Max.
100 V
2.5 4.5 V
± 200 nA
11.5
5 μA 150 μA
14 mΩ
Applications Automotive - Motor Drives - 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V
Systems Distributed Power Architechtures
and VRMs Ele...
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