Power MOSFET
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1...
Description
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T7
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL T
SOLD
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS VGS(th)
VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
© 2008 IXYS CORPORATION, All rights reserved
Maximum Ratings 100 100
V V
± 20 V
130 A 120 A 350 A
65 A 400 mJ
360 W
-55 ... +175 175
-55 ... +175
300 260
3
°C °C °C
°C °C
g
Characteristic Values Min. Typ. Max.
100 V 2.5 4.5 V
±200 nA
5 μA 250 μA 9.1 mΩ
TO-263 (7-lead) (IXTA..7)
1
7 (TAB)
Pins: 1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain
Features
Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175°C Operating Temperature
Advantages
Easy to mount Space savings High power density
Applications
Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching...
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