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IXTA160N10T7 Datasheet, Equivalent, Power MOSFET.

Power MOSFET

Power MOSFET

 

 

 

Part IXTA160N10T7
Description Power MOSFET
Feature Preliminary Technical Information Trenc hMVTM Power MOSFET IXTA160N10T7 N-Cha nnel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 II DLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Curren t Limit, RMS TC = 25°C, pulse width li mited by TJM TC = 25°C TC = 25°C IS IDM, di/dt ≤ 100 A/μs, VDD ≤ VD SS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s P lastic body for 10 seconds Maximum Rat ings TO-263 (7-lead) (IXTA.
.
7) 100 V .
Manufacture IXYS Corporation
Datasheet
Download IXTA160N10T7 Datasheet
Part IXTA160N10T7
Description Power MOSFET
Feature Preliminary Technical Information Trenc hMVTM Power MOSFET IXTA160N10T7 N-Cha nnel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 II DLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Curren t Limit, RMS TC = 25°C, pulse width li mited by TJM TC = 25°C TC = 25°C IS IDM, di/dt ≤ 100 A/μs, VDD ≤ VD SS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s P lastic body for 10 seconds Maximum Rat ings TO-263 (7-lead) (IXTA.
.
7) 100 V .
Manufacture IXYS Corporation
Datasheet
Download IXTA160N10T7 Datasheet

IXTA160N10T7

IXTA160N10T7
IXTA160N10T7

IXTA160N10T7

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