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IXTA180N10T7 Datasheet, Equivalent, Power MOSFET.Power MOSFET Power MOSFET |
| Part | IXTA180N10T7 |
|---|---|
| Description | Power MOSFET |
| Feature | PreliminaryTechnical Information
TrenchMVTM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 180 6. 4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG =3. 3 Ω TC = 25° C 1. 6 mm (0. 062 in. ) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA. . |
| Manufacture | IXYS Corporation |
| Datasheet |
| Part | IXTA180N10T7 |
|---|---|
| Description | Power MOSFET |
| Feature | PreliminaryTechnical Information
TrenchMVTM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 180 6. 4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Package Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG =3. 3 Ω TC = 25° C 1. 6 mm (0. 062 in. ) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA. . |
| Manufacture | IXYS Corporation |
| Datasheet |
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