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IXTC200N10T Dataheets PDF



Part Number IXTC200N10T
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTC200N10T DatasheetIXTC200N10T Datasheet (PDF)

TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 101 75 500 40 1.5 160 -55 ... +175 175 -55 ... +175 A A A A J W °C °C °C 1.6mm (0.062.

  IXTC200N10T   IXTC200N10T



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TrenchMVTM Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated IXTC200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient Maximum Ratings 100 100 ± 30 V V V TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 101 75 500 40 1.5 160 -55 ... +175 175 -55 ... +175 A A A A J W °C °C °C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds 300 °C 260 °C 50/60Hz, t = 1 minute, IISOL < 1mA, RMS 2500 Mounting force 11..65 / 2.5..14.6 V N/lb. ISOPLUS220 2g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V ±200 nA 5 μA 250 μA 6.3 mΩ VDSS = ID25 = RDS(on) ≤ 100V 101A 6.3mΩ ISOPLUS220 E153432 G DS G = Gate S = Source Isolated back surface D = Drain Features Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99653A(10/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 3.3Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RthJC RthCH Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Repetitive, Pulse width limited by TJM VSD IF = 50A, VGS = 0V, Note 1 trr QRM IRM IF = 100A, VGS = 0V,-di/dt = 100A/μs VR = 50V Characteristic Values Min. Typ. Max. 60 96 S 9400 1087 140 pF pF pF 35 ns 31 ns 45 ns 34 ns 152 nC 47 nC 47 nC 0.96 °C/W 0.21 °C/W IXTC200N10T ISOPLUS220 (IXTC) Outline 1.Gate 2. Drain 3.Source Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1, 2 and 3. Characteristic Values Min. Typ. Max. 200 A 500 A 1.0 V 76 ns 205 nC 5.4 A Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTC200N10T ID - Amperes ID - Amperes .


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