Document
TrenchMVTM Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
IXTC200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg
TL
VISOL Md Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
Transient
Maximum Ratings 100 100
± 30
V V
V
TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
TC = 25°C
101 75 500
40 1.5
160
-55 ... +175 175
-55 ... +175
A A A
A J
W
°C °C °C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds
300 °C 260 °C
50/60Hz, t = 1 minute, IISOL < 1mA, RMS
2500
Mounting force
11..65 / 2.5..14.6
V N/lb.
ISOPLUS220
2g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1
Characteristic Values Min. Typ. Max.
100 V
2.5 4.5 V
±200 nA 5 μA
250 μA 6.3 mΩ
VDSS = ID25 =
RDS(on) ≤
100V 101A 6.3mΩ
ISOPLUS220 E153432
G DS
G = Gate S = Source
Isolated back surface
D = Drain
Features
Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
Easy to mount Space savings High power density
Applications
Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99653A(10/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 3.3Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RthJC RthCH
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS VGS = 0V
ISM Repetitive, Pulse width limited by TJM
VSD IF = 50A, VGS = 0V, Note 1
trr QRM IRM
IF = 100A, VGS = 0V,-di/dt = 100A/μs VR = 50V
Characteristic Values Min. Typ. Max.
60 96
S
9400 1087
140
pF pF pF
35 ns 31 ns 45 ns 34 ns
152 nC 47 nC 47 nC
0.96 °C/W 0.21 °C/W
IXTC200N10T
ISOPLUS220 (IXTC) Outline
1.Gate 2. Drain 3.Source Note: Bottom heatsink (Pin 4) is electrically isolated from Pins 1, 2 and 3.
Characteristic Values Min. Typ. Max.
200 A
500 A
1.0 V
76 ns 205 nC 5.4 A
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXTC200N10T
ID - Amperes
ID - Amperes
.