IXTQ200N10T

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P Maximum Ratings 100 100 V V ± 30 V 200 A 75 A 500 A 40 A 1.5 J 550 W -55 ... +175 175 -55 ... +175 300 260 1.13 / 10 °C °C °C °C °C Nm/lb.in. 6.0 g 5.5 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V ±200 nA 5 μA 250 μA 4.5 5.5 mΩ VDSS = ID25 = RDS(on) ≤ 100V 200A 5.5mΩ TO-247 (IXTH) G DS TO-3P (IXTQ) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99654A(10/08) Symbol Test Conditions (TJ = 25°C, unless...