BC337-25

NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking – Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 Pin Configuration 123 CBE Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 337 BC 338 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 337 BC 338 45 25 50 30 5 800 1 100 200 625 150 – 65 … + 150 Unit V mA A mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 337 BC 338 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 V IC = 10 mA BC 337 45 – – BC 338 25 – – Collector-base breakdown voltage IC = 100 µA BC 337 BC 338 V(BR)CB0 50 30 – – – – Emitter-base breakdown voltage IE = 10 µA V...