NPN Silicon AF Transistors
q High current gain q High collector current q Low collector-emitter saturation voltage q Com...
NPN Silicon AF
Transistors
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (
PNP)
BC 337 BC 338
2 3
1
Type
BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
Marking –
Ordering Code
Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3
Pin Configuration 123
CBE
Package1) TO-92
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 337 BC 338
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range
Thermal Resistance Junction - ambient Junction - case1)
Symbol
VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 337
BC 338
45 25
50 30
5
800
1
100
200
625
150
– 65 … + 150
Unit V
mA A mA
mW ˚C
Rth JA Rth JC
≤ 200 ≤ 135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 –
–
BC 338
25 –
–
Collector-base breakdown voltage IC = 100 µA
BC 337 BC 338
V(BR)CB0
50 30
– –
– –
Emitter-base breakdown voltage IE = 10 µA
V...