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BC338-40 Dataheets PDF



Part Number BC338-40
Manufacturers Siemens
Logo Siemens
Description NPN Silicon AF Transistors
Datasheet BC338-40 DatasheetBC338-40 Datasheet (PDF)

NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking – Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 Pin Configuration 123 CBE Package1) TO-92 1) For detailed information see chapter Package Outline.

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NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40 Marking – Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 Pin Configuration 123 CBE Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 337 BC 338 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 337 BC 338 45 25 50 30 5 800 1 100 200 625 150 – 65 … + 150 Unit V mA A mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 337 BC 338 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 V IC = 10 mA BC 337 45 – – BC 338 25 – – Collector-base breakdown voltage IC = 100 µA BC 337 BC 338 V(BR)CB0 50 30 – – – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C ICB0 BC 338 – – 100 nA BC 337 – – 100 nA BC 338 – – 10 µA BC 337 – – 10 µA Emitter cutoff current VEB = 4 V IEB0 – – 100 nA DC current gain1) IC = 100 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 IC = 300 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 hFE – 100 160 250 160 250 400 250 350 630 60 – 100 – 170 – – – – Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VCEsat – – 0.7 V Base-emitter saturation voltage IC = 500 mA; IB = 50 mA VBEsat – – 2 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz BC 337 BC 338 Symbol Values Unit min. typ. max. fT Cobo Cibo – – – 170 – 8– 60 – MHz pF Semiconductor Group 4 BC 337 BC 338 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 1 V Collector cutoff current ICB0 = f (TA) VCB = 45 V Semiconductor Group 5 DC current gain hFE = f (IC) VCE = 1 V BC 337 BC 338 Transition frequency fT = f (IC) f = 20 MHz, TA = 25 ˚C Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Base-emitter saturation volt.


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