Document
NPN Silicon AF Transistors
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
BC 337 BC 338
2 3
1
Type
BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
Marking –
Ordering Code
Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3
Pin Configuration 123
CBE
Package1) TO-92
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 337 BC 338
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range
Thermal Resistance Junction - ambient Junction - case1)
Symbol
VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 337
BC 338
45 25
50 30
5
800
1
100
200
625
150
– 65 … + 150
Unit V
mA A mA
mW ˚C
Rth JA Rth JC
≤ 200 ≤ 135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 –
–
BC 338
25 –
–
Collector-base breakdown voltage IC = 100 µA
BC 337 BC 338
V(BR)CB0
50 30
– –
– –
Emitter-base breakdown voltage IE = 10 µA
V(BR)EB0 5 – –
Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C
ICB0
BC 338
– – 100 nA
BC 337
– – 100 nA
BC 338
– – 10 µA
BC 337
– – 10 µA
Emitter cutoff current VEB = 4 V
IEB0 – – 100 nA
DC current gain1) IC = 100 mA; VCE = 1 V
BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 IC = 300 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40
hFE
–
100 160 250 160 250 400 250 350 630
60 – 100 – 170 –
– – –
Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA
VCEsat
–
–
0.7 V
Base-emitter saturation voltage IC = 500 mA; IB = 50 mA
VBEsat
–
–
2
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter
AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz
BC 337 BC 338
Symbol
Values
Unit
min. typ. max.
fT Cobo Cibo
– – –
170 – 8– 60 –
MHz pF
Semiconductor Group
4
BC 337 BC 338
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE) VCE = 1 V
Collector cutoff current ICB0 = f (TA) VCB = 45 V
Semiconductor Group
5
DC current gain hFE = f (IC) VCE = 1 V
BC 337 BC 338
Transition frequency fT = f (IC) f = 20 MHz, TA = 25 ˚C
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10
Base-emitter saturation volt.