D726 Transistor Datasheet

D726 Datasheet, PDF, Equivalent


Part Number

D726

Description

Silicon NPNPower Transistor

Manufacture

INCHANGE

Total Page 2 Pages
Datasheet
Download D726 Datasheet


D726
INCHANGE Semiconductor
isc Silicon NPNPower Transistor
isc Product Specification
2SD726
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High Power Dissipation
·Complement to Type 2SB690
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE UNIT
.iscsemVCBO Collector-Base Voltage
100 V
wwwVCEO Collector-Emitter Voltage
80 V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
8A
40 W
150
Tstg Storage Temperature Range
-45~150
isc Websitewww.iscsemi.cn

D726
INCHANGE Semiconductor
isc Silicon NPNPower Transistor
isc Product Specification
2SD726
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
80
5
V
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
2.0 V
1.5 V
0.1 mA
hFE-1
DC Current Gain
i.cnhFE-2
DC Current Gain
.iscsemCOB Collector Output Capacitance
wwwfT Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
IC= 0.1A; VCE= 5V
IE= 0; VCB= 20V; f= 1MHz
IC= 0.5A; VCE= 5V
60
35
40
10
‹ hFE-1 Classifications
BC
200
pF
MHz
60-120 100-200
isc Websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor isc Silicon NPNPo wer Transistor isc Product Specificati on 2SD726 DESCRIPTION ·Collector-Emit ter Breakdown Voltage- : V(BR)CEO = 80V (Min) ·High Power Dissipation ·Comple ment to Type 2SB690 APPLICATIONS ·Des igned for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATING S(Ta=25℃) i.cnSYMBOL PARAMETER VAL UE UNIT .iscsemVCBO Collector-Base Vol tage 100 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltag e 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak PC To tal Power Dissipation @ TC=25℃ TJ Ju nction Temperature 8A 40 W 150 ℃ Ts tg Storage Temperature Range -45~150 isc Website:www.iscsemi.cn INCHA NGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2 SD726 ELECTRICAL CHARACTERISTICS TC=25 ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UN IT V(BR)CEO Collector-Emitter Breakdow n Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; .
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