Band-switching diode
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D739
BA278 Band-switching diode
Preliminary specification
2001 Jan 15
Philips S...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D739
BA278 Band-switching diode
Preliminary specification
2001 Jan 15
Philips Semiconductors
Band-switching diode
Preliminary specification
BA278
FEATURES Small plastic SMD package Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.2 pF Low diode forward resistance: max. 0.7 Ω.
APPLICATIONS Low loss band switching in VHF television tuners. Surface mount band-switching circuits.
DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523V SMD package.
PINNING
PIN DESCRIPTION
1
;2
handbook, halfpa1ge 1
cathode anode
22
Top Tvoiepwview
MAM399 MBK258
Marking code:
Fig.1 Simplified outline (SOD523V) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature
CONDITIONS Ts = 90 °C
MIN.
− − − −65 −65
MAX. 35
100 715 +150 +150
UNIT
V mA mW °C °C
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF forward voltage IR reverse current
Cd diode capacitance rD diode forward resistance
IF = 10 mA VR = 25 V VR = 20 V; Tamb = 75 °C f = 1 MHz; VR = 6 V; note 1; see Fig.2 IF = 2 mA; f = 100 MHz; note 1; see Fig.3
Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX. 1
50 1 1.2 0.7
UNIT
V nA µA...
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