PF8N60C

FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction tempera...