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BUZ905 Datasheet, Equivalent, POWER MOSFET.P-CHANNEL POWER MOSFET P-CHANNEL POWER MOSFET |
| Part | BUZ905 |
|---|---|
| Description | P-CHANNEL POWER MOSFET |
| Feature | MAGNA
TEC
MECHANICAL DATA Dimensions in mm
25. 0 +0. 1 -0. 15 10. 90 ± 0. 1 8. 7 Max. 1. 50 Typ. 11. 60 ± 0. 3 BUZ905 B UZ906 P–CHANNEL POWER MOSFET POWER MO SFETS FOR AUDIO APPLICATIONS 39. 0 ± 1 . 1 30. 2 ± 0. 15 16. 9 ± 0. 15 Ø 20 Max. Ø 1. 0 12 R 4. 0 ± 0. 1 R 4. 4 ± 0. 2 Pin 1 – Gate TO–3 Pin 2 – Drai n Case – Source FEATURES • HIGH S PEED SWITCHING • P–CHANNEL POWER MO SFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHAN NEL ALSO AVAILABLE AS BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C unless otherw . |
| Manufacture | Magnatec |
| Datasheet |
| Part | BUZ905 |
|---|---|
| Description | P-CHANNEL POWER MOSFET |
| Feature | MAGNA
TEC
MECHANICAL DATA Dimensions in mm
25. 0 +0. 1 -0. 15 10. 90 ± 0. 1 8. 7 Max. 1. 50 Typ. 11. 60 ± 0. 3 BUZ905 B UZ906 P–CHANNEL POWER MOSFET POWER MO SFETS FOR AUDIO APPLICATIONS 39. 0 ± 1 . 1 30. 2 ± 0. 15 16. 9 ± 0. 15 Ø 20 Max. Ø 1. 0 12 R 4. 0 ± 0. 1 R 4. 4 ± 0. 2 Pin 1 – Gate TO–3 Pin 2 – Drai n Case – Source FEATURES • HIGH S PEED SWITCHING • P–CHANNEL POWER MO SFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHAN NEL ALSO AVAILABLE AS BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C unless otherw . |
| Manufacture | Magnatec |
| Datasheet |
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