BUZ905

MAGNA TEC MECHANICAL DATA Dimensions in mm 25.0 +0.1 -0.15 10.90 ± 0.1 8.7 Max. 1.50 Typ. 11.60 ± 0.3 BUZ905 BUZ906 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS 39.0 ± 1.1 30.2 ± 0.15 16.9 ± 0.15 Ø 20 Max. Ø 1.0 12 R 4.0 ± 0.1 R 4.4 ± 0.2 Pin 1 – Gate TO–3 Pin 2 – Drain Case – Source FEATURES HIGH SPEED SWITCHING P–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE N–CHANNEL ALSO AVAILABLE AS BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS Gate – Source Voltage ID Continuous Drain Current ID(PK) Body Drain Diode PD Total Power Dissipation @ Tcase = 25°C Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature RθJC Thermal Resistance Junction – Case BUZ905 -160V BUZ906 -200V ±14V -8A -8A 125W –55 to 150°C 150°C 1.0°C/W Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA TEC BUZ905 BUZ906 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage VGS = 10V ID = -10mA Gate – Source Breakdown Voltage VDS = 0 Gate – Source Cut–Off Voltage VDS = -10V Drain – Source Saturation Voltage VGD = 0 IDSX Drain – Source Cut–Off Current VGS = -10V BUZ905 BUZ906 IG = ±100µA ID = -100mA ID = -8A VDS = -160V...