STP310N10F7

STP310N10F7 N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% Order code STP310N10F7 VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A Ultra low on-resistance 100% avalanche tested Applications Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6 $0Y Order codes STP310N10F7 Table 1. Device summary Marking Package 310N10F7 TO-220 Packaging Tube July 2013 This is information on a product in full production. DocID022287 Rev 7 1/13 www.st.com Contents Contents STP310N10F7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 DocID022287 Rev 7 STP...