STF31N65M5

STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Features Order code VDS @ TJMAX RDS(on ) max. STB31N65M5 STF31N65M5 STP31N65M5 710 V 0.148 Ω STW31N65M5 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested ID 22 A Package D2PAK TO-220FP TO-220 TO-247 G(1) Applications Switching applications S(3) Description AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Product status link STB31N65M5 STF31N65M5 STP31N65M5 STW31N65M5 DS8912 - Rev 4 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter D²PAK, TO-220, TO-247 VGS Gate-source voltage ±25 Drain current (continuous) at ID TC = 25 °C 22 Drain current (continuous) at ID TC = 100 °C 13.9 IDM (2) Drain current (pulsed) 88 PTOT Total power dissipation at TC = 25 °C 150 VISO ...