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C5000 Datasheet, Equivalent, 2SC5000.2SC5000 2SC5000 |
| Part | C5000 |
|---|---|
| Description | 2SC5000 |
| Feature | TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applicati ons
2SC5000
Unit: mm
• Low collecto r saturation voltage: VCE (sat) = 0. 4 V (max) (IC = 5 A) Absolute Maximum Rat ings (Tc = 25°C) Characteristics Sym bol Rating Unit Collector-base volta ge VCBO 80 V Collector-emitter voltag e VCEO 50 V Emitter-base voltage VEB O 7 V Collector current IC 10 A Base current IB 1 A Collector power dissi pation PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using co ntinuously under heavy loads (e. g. the application of high . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | C5000 |
|---|---|
| Description | 2SC5000 |
| Feature | TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applicati ons
2SC5000
Unit: mm
• Low collecto r saturation voltage: VCE (sat) = 0. 4 V (max) (IC = 5 A) Absolute Maximum Rat ings (Tc = 25°C) Characteristics Sym bol Rating Unit Collector-base volta ge VCBO 80 V Collector-emitter voltag e VCEO 50 V Emitter-base voltage VEB O 7 V Collector current IC 10 A Base current IB 1 A Collector power dissi pation PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using co ntinuously under heavy loads (e. g. the application of high . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
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