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IRGP4062-EPBF Datasheet, Equivalent, BIPOLAR TRANSISTOR.INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR |
| Part | IRGP4062-EPBF |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | INSULATED GATE BIPOLAR TRANSISTOR
Featur es
• Low VCE (ON) Trench IGBT Technol ogy • Low switching losses • Maximu m Junction temperature 175 °C • 5 μ S short circuit SOA • Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-eff icient • Tight parameter distribution • Lead Free Package Benefits • Hig h Efficiency in a wide range of applica tions • Suitable for a wide range of switching frequencies due to Low VCE (O N) and Low Switching losses • Rugged transient Performance for increased rel iability • Excellent Current sharing in parallel operation • Low EMI IRGP 4062-E . |
| Manufacture | International Rectifier |
| Datasheet |
| Part | IRGP4062-EPBF |
|---|---|
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Feature | INSULATED GATE BIPOLAR TRANSISTOR
Featur es
• Low VCE (ON) Trench IGBT Technol ogy • Low switching losses • Maximu m Junction temperature 175 °C • 5 μ S short circuit SOA • Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-eff icient • Tight parameter distribution • Lead Free Package Benefits • Hig h Efficiency in a wide range of applica tions • Suitable for a wide range of switching frequencies due to Low VCE (O N) and Low Switching losses • Rugged transient Performance for increased rel iability • Excellent Current sharing in parallel operation • Low EMI IRGP 4062-E . |
| Manufacture | International Rectifier |
| Datasheet |
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