Document
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2177
(F1E50VX2)
500V 1A
OUTLINE DIMENSIONS
Case : E-pack
(Unit : mm)
FEATURES
Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
APPLICATION
Switching power supply of AC 100V input High voltage power supply Inverter
RATINGS
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power MOSFET
2SK2177 ( F1E50VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 500V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Transconductance
gfs ID = 0.5A, VDS = 10V
Static Drain-Source On-state Resistance RDS(ON) ID = 0.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 0.3mA, VDS = 10V
Source-Drain Diode Forwade Voltage
VSD IS = 0.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 1A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 10V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 0.5A, VGS = 10V, RL = 300Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
500 V
250 μA
±0.1
0.3 0.7
S
5.8 7.0 Ω
2.5 3.0 3.5 V
1.5
12.5 ℃/W
6 nC
140
13 pF
45
35 70 ns
60 100
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Static Drain-Source On-state Resistance RDS(ON) [Ω]
2SK2177 Static Drain-Source On-state Resistance
100
10 ID = 0.5A
1
0.1 -50
VGS = 10V pulse test TYP
0 50 100 150
Case Temperature Tc [°C]
2SK2177 Gate Threshold Voltage
6
5
Gate Threshold Voltage VTH [V]
4
3
2
1 0
-50
VDS = 10V ID = 1mA TYP
0 50 100 150
Case Temperature Tc [°C]
2SK2177 Transient Thermal Impedance
100
Transient Thermal Impedance θjc(t) [°C/W]
10
1
0.1
0.01
10-4
10-3
10-2
10-1
100
101
102
Time t [s]
Power Derating [%]
2SK2177
100
Power Derating
80
60
40
20
0 0 50 100
Case Temperature Tc [°C]
150
.