N-CHANNEL Power MOSFET
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STP80NF55L-08 STB80NF55L-08
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET
...
Description
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STP80NF55L-08 STB80NF55L-08
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
STP80NF55L-08 STB80NF55L-08
55 V 55 V
0.008Ω 0.008Ω
s TYPICAL RDS(on) = 0.0065Ω s LOW THRESHOLD DRIVE s LOGIC LEVEL DEVICE
ID
80 A 80 A
3 2 1
3 1
TO-220
D2PAK
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
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APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID (1)
Drain Current (continuos) at TC = 25°C
ID (1)
Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS(3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2003
DataSheet4U.com
Value 55 55 ± 16 80 80 320 300 2 15 870
–55 to 175 175
(1) Current Limited by Package (2) ISD ≤80A, di/dt ≤500A/µ...
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