Data Sheet
Rev.1.0 18.02.2014
1024MB DDR3 – SDRAM SO-DIMM
204 Pin SO-DIMM
Features:
SGN01G64C1CQ1SA-XX[E/W]RT
20...
Data Sheet
Rev.1.0 18.02.2014
1024MB DDR3 – SDRAM SO-DIMM
204 Pin SO-DIMM
Features:
SGN01G64C1CQ1SA-XX[E/W]RT
204-pin 64-bit DDR3 Small Outline Dual-In-Line Double
1GByte in FBGA Technology
Data Rate Synchronous DRAM module Module organization: single rank 128M x 64
RoHS compliant
VDD = 1.5V ±0.075V, VDDQ 1.5V ±0.075V 1.5V I/O ( SSTL_15 compatible)
Options:
Fly-by-bus with termination for C/A & CLK bus On-board I2C temperature sensor with integrated serial
presence-detect (SPD) EEPROM
Data Rate / Latency DDR3 1333 MT/s CL9
Marking -CC
Gold-contact pads This module is fully pin and functional compatible to the
DDR3 1600 MT/s CL11
-DC
JEDEC PC3-12800 spec. and JEDEC- Standard MO-268.
Module Density 1GByte with 4 dies and 1 rank
(see www.jedec.org) The pcb and all components are manufactured according
to the RoHS compliance specification [EU Directive
Standard Grade Grade E Grade W
(TA) 0°C to 70°C
(TC) 0°C to 85°C
(TA) (TC) (TA) (TC)
0°C to 85°C 0°C to 95°C *) -40°C to 85°C -40°C to 95°C *)
2002/95/EC Restriction of Hazardous Substances (RoHS)]
DDR3 - SDRAM component Samsung K4B2G1646Q 128Mx16 DDR3 SDRAM in PG-TFBGA-96 package 8-bit pre-fetch architecture Programmable CAS Latency, CAS Write Latency, Additive Latency, Burst Length and Burst Type.
On-Die-Termination (ODT) and Dynamic ODT for improved *) The refresh rate has to be doubled when 85°C
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