LZP60N06

LITE ON LITE-ON SEMICONDUCTOR LZP60N06 Features Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Wide Expanded Safe Operating Area Application DC-DC Converters UPS & Monitors High Power Swtching D G S GDS TO-220 BVDSS = 60V RDS(on) = 0.016Ω Typ = 0.014Ω ID = 60A Absolute Maximum Ratings ( TC = 25°C Unless Otherwise Specified) Symbol Characteristic VDSS ID IDM VGS EAS IAR Drain-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current (1) (2) (1) EAR Repetitive Avalanche Energy (1) dv/dt Peak Diode Recovery dv/dt (3) PD Total Power Dissipation (TC = 25°C) Linear Derating Factor TJ, TSTG Operating Junction and Storage Temperature Range TL Maximum Lead Temp. for soldering purposes, 1/8" from case for 5-seconds Value 60 60 43 240 ± 20 600 60 12.5 5.5 125 0.83 -55 to +175 300 Units V A A V mJ A mJ V/ns W W/°C °C °C Thermal Characteristics Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Junction-to-Case-to-Sink Junction-to-Ambient Typ. Max. Units -- 1.2 0.5 -- °C/W -- 62.5 Rev 0. September. 2006 LZP60N06 N-CHANNEL Electrical Characteristics (TC = 25°C unless otherwise specified) Symbol Characteristic Min. Typ. Max. BVDSS ∆BVDSS/∆TJ VGS(th) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage 60 -2.5 -0.08 -- --4....