FX502

Ordering number:EN4878 FX502 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. · The FX502 houses two chips, each being equivalent to the 2SD1805, in one package. · Matched pair characteristics. Package Dimensions unit:mm 2118 [FX502] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.8mm) 1 unit Mounted on ceramic board (750mm2×0.8mm) Conditions Ratings 60 20 6 5 8 1 1.5 2 150 –55 to +150 Unit V V V A A A W W ˚C ˚C · Marking:502 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1389 No.4878-1/4 FX502 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwi...