2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
1 ...
2SB1032(K)
Silicon
PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
1 2 3
1. Base 2. Collector
(Flange) 3. Emitter
2 1
1.0 kΩ (Typ)
200 Ω (Typ)
3
ID
2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C
Symbol VCBO VCEO VEBO IC I C(peak) ID*1 PC * 1 Tj Tstg
Rating –120 –120 –7 –10 –15 10 80 150 –55 to +150
Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO voltage
–120
Emitter to base breakdown voltage
V(BR)EBO
–7
Collector cutoff current
DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test
I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off
— — 1000 — — — — — — —
Typ —
—
— — — — — — — — 0.8 4.0
Max Unit —V
—V
–100 µA –10 µA 20000 –1.5 V –3.0 V –2.0 V –3.5 V 3.0 V — µs — µs
Test conditions IC = –25 mA, RBE = ∞
IE = –200 mA, IC = 0
VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –5 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 IC = –5 A, IB = –10 mA*1 IC = –10 A, IB = –0.1 A*1 ID = 10 A*1 VCC = –30 V, IC = –5 A, IB1 = –IB2 = –10 mA
2
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