D111

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 80 V 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous IB Base Current-Continuous -10 A 3A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD111 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance VEB= 10V; IC=0 IC= 1A; VCE= 5V IC= 5A; VCE= 5V IC= 1A ; VCE= 10V IE= 0; VCB= 50V; f= 1MHz MIN TYP. MAX UNIT 80 V 10 V 1.5 V 2.5 V 0.5 mA 10 mA 30 300 10 1 MHz 200 pF ‹ h...