BSZ110N08NS5

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ110N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V BSZ110N08NS5 1Description Features Idealforhighfrequencyswitchingandsync.rec. OptimizedtechnologyforDC/DCconverters ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplications Halogen-freeaccordingtoIEC61249-2-21 Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 11.0 mΩ ID 40 A Qoss 19 nC QG(0V..10V) 15 nC TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ110N08NS5 Package PG-TSDSON-8 FL Marking 110N08N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1,2014-05-05 OptiMOSª5Power-Transistor,80V BSZ110N08NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . ....