MMBF4393LT1G

MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. http://onsemi.com 3 1 2 SOT−23 CASE 318 STYLE 10 2 SOURCE 3 GATE 1 DRAIN MARKING DIAGRAM XXX M G G 1 XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. MARKING & ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions se...